A. Scholze

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face

A. Scholze, W. G. Schmidt, F. Bechstedt · Physical review. B, Condensed matter · 1996 · 71 citations

Total Energy, Engineering, Electronic Structure +18

Single-electron device simulation

A. Scholze, Andreas Schenk, Wolf Fïchtner · IEEE Transactions on Electron Devices · 2000 · 37 citations

Device Modeling, Electrical Engineering, Engineering +13

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?

W. G. Schmidt, A. Scholze, F. Bechstedt · Surface Science · 1996 · 23 citations

Engineering, Physics, Mechanics +5

Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET

Vishal A. Tiwari, D. Jaeger, A. Scholze et al. · IEEE Transactions on Electron Devices · 2014 · 23 citations

Device Modeling, Electrical Engineering, Engineering +11