A. Scholze - Concepedia

Author

A. Scholze

Friedrich Schiller University Jena

Also Known As

A Scholze, A. Scholze, Andreas Scholze, Scholze, Andreas

Publications

388

Citations

H-Index

Concepts

All Affiliations

Friedrich Schiller University Jena Samsung (South Korea)ETH Zurich STMicroelectronics (Czechia)GlobalFoundries (Germany)

About

A. Scholze is an author at Friedrich Schiller University Jena specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	303
2	Applied Physics	8	8	292
3	Electrical Engineering	5	5	187
4	Natural Sciences	3	3	119
5	Computer Engineering	1	1	97

A. Scholze

Publications

314

Citations

H-Index

Page 1

	Year	Citations
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI Kwangyou Seo, Bala Haran, Divya Gupta, EngineeringVlsi DesignFinfet TechnologyIntegrated CircuitsWafer Scale Processing	2014	97
Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face A. Scholze, W. G. Schmidt, F. Bechstedt Physical review. B, Condensed matter Total EnergyEngineeringElectronic StructureDifferent ReconstructionsSurface Reconstruction	1996	71
Single-electron device simulation A. Scholze, Andreas Schenk, Wolf Fïchtner IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics	2000	37
Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface? W. G. Schmidt, A. Scholze, F. Bechstedt Surface Science EngineeringPhysicsMechanicsApplied PhysicsIdeal Chains	1996	23
Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET Vishal A. Tiwari, D. Jaeger, A. Scholze, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsSubstrate Bias	2014	23
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations Darsen D. Lu, P. Morin, Bhagawan Sahu, ECS Transactions Process IntegrationDevice ModelingElectrical EngineeringEngineeringSige-channel Germanium Content	2014	17
Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography Andrew J. Martin, Yong Wei, A. Scholze Ultramicroscopy Electrical EngineeringEngineeringPhysicsChannel Dopant ProfileNanoelectronics	2017	13
Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure A. Scholze, W. G. Schmidt, P. Käckell, Materials Science and Engineering B Materials ScienceEngineeringPhysicsNatural SciencesSurface Analysis	1996	11
Adatoms and vacancies on the diamond(111) surface F. Bechstedt, W. G. Schmidt, A. Scholze Europhysics Letters (EPL) Materials ScienceDiamond-like CarbonEngineeringPhysicsCrystalline Defects	1996	11
Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices Frederik Ole Heinz, Andreas Schenk, A. Scholze, Journal of Computational Electronics	2002	11

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