Ilgweon Kim

Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation

Sangsu Park, Hyunsik Im, Ilgweon Kim et al. · Japanese Journal of Applied Physics · 2006 · 107 citations

Non-volatile Memory, Electrical Engineering, Silicon Nanocrystal Memory +12

Room temperature single electron effects in a Si nano-crystal memory

Ilgweon Kim, Sangyeon Han, Kwangseok Han et al. · IEEE Electron Device Letters · 1999 · 57 citations

Materials Science, Si Nano-crystals, Electrical Engineering +15

A silicon quantum wire transistor with one-dimensional subband effects

Minkyu Je, Sangyeon Han, Ilgweon Kim et al. · Solid-State Electronics · 2000 · 41 citations

One-dimensional Subband Effects, Physics, Quantum Device +2

Characteristics of p-channel Si nano-crystal memory

Kwangseok Han, Ilgweon Kim, Hyungcheol Shin · IEEE Transactions on Electron Devices · 2001 · 38 citations

Materials Science, Direct Tunneling Regime, Electrical Engineering +11

Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim, Sangyeon Han, Hyung-Sik Kim et al. · 2002 · 23 citations

Electrical Engineering, Si Quantum, Engineering +12