W. Yeo

Improvement on epitaxial grown of InN by migration enhanced epitaxy

H. J. Lü, W. J. Schaff, Jeonghyun Hwang et al. · Applied Physics Letters · 2000 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +17

GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm

A. G. U. Perera, S. G. Matsik, H. C. Liu et al. · Applied Physics Letters · 2000 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Michael J. Murphy, K. Chu, Hao Wu et al. · Applied Physics Letters · 1999 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures

Michael J. Murphy, K. Chu, Hao Wu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 41 citations

Engineering, Materials Science, Physics +17

Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

R. Dimitrov, V. Tilak, W. Yeo et al. · Solid-State Electronics · 2000 · 24 citations · Full text

Engineering, Materials Science, Physics +17