Rajesh K. Bag - Concepedia

Author

Rajesh K. Bag

Solid State Physics Laboratory ORCID

Also Known As

R. K. Bag, R.K. Bag, Rajesh Bag, Rajesh K. Bag, Rajesh Kumar Bag

Publications

256

Citations

H-Index

Concepts

All Affiliations

Solid State Physics Laboratory Indian Institute of Technology Delhi Jamia Millia Islamia

About

Rajesh K. Bag is an author at Solid State Physics Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	168
2	Applied Physics	5	5	168
3	Electrical Engineering	3	3	134
4	Materials Science	3	3	79
5	Materials Engineering	1	1	21

Rajesh K. Bag

Publications

211

Citations

H-Index

Page 1

	Year	Citations
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT Amit Malik, Chandan Sharma, Robert Laishram, Solid-State Electronics Algan/gan Interface TrapsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2018	48
Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT Kapil Narang, Rajesh K. Bag, Vikash Kumar Singh, Journal of Alloys and Compounds Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Science	2019	45
Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure Akhilesh Pandey, Vikash Kumar Singh, Sandeep Dalal, Vacuum Electrical CharacteristicsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2020	41
Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE Ruby Khan, Rajesh K. Bag, Kapil Narang, Journal of Materials Science Materials in Electronics Materials ScienceMaterials EngineeringAluminium NitrideEngineeringApplied Physics	2019	21
Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates Premila Mohan, Rajesh K. Bag, Sunita Singh, Nanotechnology SemiconductorsMaterials ScienceEpitaxial GrowthEngineeringElectronic Materials	2011	13
High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics Kapil Narang, Akhilesh Pandey, Ruby Khan, Materials Science and Engineering B	2022	12
Suitability of thin-GaN for AlGaN/GaN HEMT material and device Kapil Narang, Vikash Kumar Singh, Akhilesh Pandey, Journal of Materials Science	2022	11
Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence Ruby Khan, Aman Arora, Anubha Jain, Journal of Materials Science Materials in Electronics	2020	10
Effect of different layer structures on the RF performance of GaN HEMT devices Jagori Raychaudhuri, Jayjit Mukherjee, Sudhir Kumar, Semiconductor Science and Technology	2021	10

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