P. Seekell

0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math> </inline-formula> InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

D. Xu, Kanin Chu, José Díaz et al. · IEEE Transactions on Electron Devices · 2016 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

D. Xu, W. Kong, Xiaoping Yang et al. · IEEE Electron Device Letters · 2008 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

D. Xu, Xiaoping Yang, W. Kong et al. · IEEE Transactions on Electron Devices · 2011 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source–Drain Spacing: Performance Enhancement and Tradeoffs

D. Xu, Xiaoping Yang, P. Seekell et al. · IEEE Transactions on Electron Devices · 2011 · 10 citations

Engineering, Electrical Engineering, Materials Science +15