Md. Aftab Baig

Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications

Sourav De, Md. Aftab Baig, Bo-Han Qiu et al. · Frontiers in Nanotechnology · 2022 · 49 citations · Full text

Engineering, Emerging Memory Technology, Magnetic Resonance +20

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang et al. · IEEE Transactions on Electron Devices · 2022 · 45 citations

Engineering, Vlsi Design, Integrated Circuits +20

Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses

Sourav De, Hoang‐Hiep Le, Bo-Han Qiu et al. · IEEE Electron Device Letters · 2021 · 42 citations

Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology

Sourav De, Darsen D. Lu, Hoang‐Hiep Le et al. · Symposium on VLSI Technology · 2021 · 41 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Neuromorphic Computing with Fe-FinFETs in the Presence of Variation

Sourav De, Md. Aftab Baig, Bo-Han Qiu et al. · 2022 · 33 citations

Electrical Engineering, Engineering, Physics +15