A. Werbowy

Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures

Mariusz Sochacki, Adam Kolendo, J. Szmidt et al. · Solid-State Electronics · 2005 · 63 citations

Engineering, Electrical Engineering, Materials Science +16

Reactive ion etching of novel materials—GaN and SiC

A. Szczęsny, P. Śniecikowski, J. Szmidt et al. · Vacuum · 2003 · 39 citations

Engineering, Materials Engineering, Materials Science +14

Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes

Mariusz Sochacki, R. J. Lukasiewicz, W. Rzodkiewicz et al. · Diamond and Related Materials · 2005 · 21 citations

Engineering, Materials Engineering, Materials Science +16

Influence of annealing on reverse current of 4H–SiC Schottky diodes

Mariusz Sochacki, J. Szmidt, Mietek Bakowski et al. · Diamond and Related Materials · 2002 · 18 citations

Engineering, Electrical Engineering, Materials Science +11

Nanocrystalline C=N thin films

J. Szmidt, A. Werbowy, Krzysztof Zdunek et al. · Diamond and Related Materials · 1996 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +12