Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Status and prospects for SiC power MOSFETs

James A. Cooper, M. R. Melloch, Ranbir Singh et al. · IEEE Transactions on Electron Devices · 2002 · 498 citations

Engineering, Electrical Engineering, Materials Science +17

Insulator investigation on SiC for improved reliability

Lori A. Lipkin, John W. Palmour · IEEE Transactions on Electron Devices · 1999 · 221 citations

Engineering, Electrical Engineering, Materials Science +17

Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC

Monica Mathur, James A. Cooper · IEEE Transactions on Electron Devices · 1999 · 99 citations

Engineering, Electrical Engineering, Materials Science +17