Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes - Concepedia

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Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes

21

Citations

11

References

2005

Year

Mariusz Sochacki, R. J. Lukasiewicz, W. Rzodkiewicz, A. Werbowy, J. Szmidt, E. Staryga

Diamond and Related Materials

Electrical EngineeringSemiconductor DeviceEngineeringApplied PhysicsEdge TerminationSemiconductor Device Fabrication4H-sic Schottky DiodesSilicon Dioxide

References

	Year	Citations

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