Dongna Shen

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Luc Thomas, Guenole Jan, Huanlong Liu et al. · Journal of Applied Physics · 2014 · 242 citations

Engineering, Computer Engineering, Materials Science +17

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Guenole Jan, Luc Thomas, Son Le et al. · 2014 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +15

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, Tom Zhong, W.N. Hsu et al. · 2015 · 56 citations

Engineering, Computer Engineering, Electrical Engineering +16

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Jodi Iwata-Harms, Guenole Jan, S. Serrano-Guisan et al. · Scientific Reports · 2019 · 43 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Luc Thomas, Guenole Jan, Son Le et al. · 2015 · 37 citations

Engineering, Electrical Engineering, Electronic Materials +14