A. Munkholm

Auger recombination in InGaN measured by photoluminescence

Yinchu Shen, Gerd Mueller, Satoshi Watanabe et al. · Applied Physics Letters · 2007 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Capturing a Photoexcited Molecular Structure Through Time-Domain X-ray Absorption Fine Structure

Lin X. Chen, W. Jäger, G. Jennings et al. · Science · 2001 · 292 citations

Natural Sciences, Chemistry, Physics +9

Performance of high‐power III‐nitride light emitting diodes

G. Chen, Michael D. Craven, A. Kim et al. · physica status solidi (a) · 2008 · 156 citations

Engineering, Electrical Engineering, Materials Science +17

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN

G. B. Stephenson, J. A. Eastman, Orlando Auciello et al. · MRS Bulletin · 1999 · 59 citations

Natural Sciences, Materials Engineering, Materials Science +16

<i>In situ</i>, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN

P. Fini, A. Munkholm, Carol Thompson et al. · Applied Physics Letters · 2000 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +15