D. Chandler‐Horowitz

High-accuracy, midinfrared (450cm−1⩽ω⩽4000cm−1) refractive index values of silicon

D. Chandler‐Horowitz, P. M. Amirtharaj · Journal of Applied Physics · 2005 · 194 citations

Short Wavelength Optic, High Resolution, Engineering +22

Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

Nhan V. Nguyen, Albert V. Davydov, D. Chandler‐Horowitz et al. · Applied Physics Letters · 2005 · 153 citations

Optical Materials, Engineering, Hafnium Silicate +20

Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: Results of a CCQM pilot study

M. P. Seah, Steven J. Spencer, Farid Bensebaa et al. · Surface and Interface Analysis · 2004 · 139 citations

A comparison of techniques for nondestructive composition measurements in CdZnTe substrates

S. P. Tobin, J. Tower, P. W. Norton et al. · Journal of Electronic Materials · 1995 · 62 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

Nhan V. Nguyen, D. Chandler‐Horowitz, P. M. Amirtharaj et al. · Applied Physics Letters · 1994 · 59 citations

Materials Science, Materials Engineering, Dielectric Function +15