H. Karimy

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

D. Xu, W. Kong, Xiaoping Yang et al. · IEEE Electron Device Letters · 2008 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Wideband medium power amplifiers using a short gate-length GaAs MMIC process

Matthew Morgan, Eric Bryerton, H. Karimy et al. · 2009 · 12 citations

Engineering, Electrical Engineering, Microelectronics +16

Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

D. Xu, Xiaoping Yang, W. Kong et al. · IEEE Transactions on Electron Devices · 2011 · 11 citations

Engineering, Electrical Engineering, Materials Science +17