Shin-ichi Morishima

Growth of Eu Doped GaN and Electroluminescence from MIS Structure

Shin-ichi Morishima, Takahiro Maruyama, Masanori Tanaka et al. · physica status solidi (a) · 1999 · 87 citations

Materials Science, Luminescence Intensity, Electrical Engineering +13

Concentration quenching of Eu-related luminescence in Eu-doped GaN

Hyungjin Bang, Shin-ichi Morishima, Junji Sawahata et al. · Applied Physics Letters · 2004 · 64 citations

Materials Science, Luminescence Intensity, Photoluminescence +13

MBE growth of Eu- or Tb-doped GaN and its optical properties

Hyungjin Bang, Shin-ichi Morishima, Zhiqiang Li et al. · Journal of Crystal Growth · 2002 · 59 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +10

Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

Shin-ichi Morishima, Takahiro Maruyama, Katsuhiro Akimoto · Journal of Crystal Growth · 2000 · 49 citations

Materials Engineering, Materials Science, Eu-doped Gan +6

Electron-transfer photoreactions of small-ring compounds: nature and role of cation-radical intermediates

Tsutomu Miyashi, Yasutake Takahashi, Hitoshi Ohaku et al. · Pure and Applied Chemistry · 1991 · 26 citations

Chemical Engineering, Cation-radical Intermediates, Engineering +11