Growth of Eu Doped GaN and Electroluminescence from MIS Structure

Abstract

Efficient Eu-related photoluminescence was observed from Eu doped GaN grown by gas-source molecular beam epitaxy using ammonia as a nitrogen source on Al2O3(0001) or Si(111) substrates. Photoluminescence spectra from Eu doped GaN show red emission at 622 nm which can be assigned as 5D0–7F2 transition of Eu3+ ion. The effects of the growth conditions and substrates on the luminescence intensity were studied, and the emission mechanism was suggested based on the photoluminescence excitation spectra. Room temperature operation of MIS diodes composed of Eu doped GaN were demonstrated.