Joanna Moneta

Stack of two III-nitride laser diodes interconnected by a tunnel junction

M. Siekacz, G. Muzioł, Mateusz Hajdel et al. · Optics Express · 2019 · 35 citations · Full text

Engineering, Materials Science, Physics +16

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Joanna Moneta, M. Siekacz, Ewa Grzanka et al. · Applied Physics Letters · 2018 · 26 citations

Engineering, Materials Engineering, Materials Science +17

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Mikołaj Grabowski, Ewa Grzanka, Szymon Grzanka et al. · Scientific Reports · 2021 · 20 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

Joanna Moneta, Polyxeni Chatzopoulou, Isaak G. Vasileiadis et al. · Scientific Reports · 2020 · 17 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN

I. Belabbas, Isaak G. Vasileiadis, Joanna Moneta et al. · Journal of Applied Physics · 2019 · 13 citations

Natural Sciences, Materials Science, Physics +17