William Austin Curbow

Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules

Daniel Martin, Peter Killeen, William Austin Curbow et al. · 2016 · 26 citations

Engineering, Electrical Engineering, Low-power Design +13

Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes

Daniel Martin, William Austin Curbow, Brett Sparkman et al. · 2017 · 21 citations

Engineering, Electrical Engineering, Power Electronics +12

Dynamic Characterization of Next Generation Medium Voltage (3.3 kV, 10 kV) Silicon Carbide Power Modules

Jonathan Hayes, William Austin Curbow, Brett Sparkman et al. · 2017 · 21 citations

Engineering, Electrical Engineering, Systems Engineering +17

Performance analysis of a SiC MOSFET half bridge power module with a Miller clamp

Daniel Martin, William Austin Curbow, Ty McNutt · 2017 · 10 citations

Engineering, Electrical Engineering, Low-power Design +12