Concepedia
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45
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Active since
1999
Y. Fukushima is an author specializing in fully depleted silicon-on-insulator transistors, parasitic effects, and device simulation.
Publications per year
1999–1999
Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects
A.O. Adan, K. Higashi, Y. Fukushima · IEEE Transactions on Electron Devices · 1999 · 45 citations
Engineering, Computer Engineering, Electrical Engineering +17
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