A.O. Adan

Linearity and low-noise performance of SOI MOSFETs for RF applications

A.O. Adan, Toshihiko Yoshimasu, S. Shitara et al. · IEEE Transactions on Electron Devices · 2002 · 103 citations

Low-power Electronics, Electrical Engineering, Engineering +11

The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

A.O. Adan, Daisuke Tanaka, Lajos Burgyan et al. · IEEE Power Electronics Magazine · 2019 · 74 citations

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +16

OFF-State leakage current mechanisms in bulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current

A.O. Adan, K. Higashi · IEEE Transactions on Electron Devices · 2001 · 61 citations

Device Modeling, Off Leakage, Electrical Engineering +12

Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects

A.O. Adan, K. Higashi, Y. Fukushima · IEEE Transactions on Electron Devices · 1999 · 44 citations

Low-power Electronics, Device Modeling, Electrical Engineering +12

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

T. Nagahisa, Hisao Ichijoh, Takamitsu Suzuki et al. · Japanese Journal of Applied Physics · 2016 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10