Sanghoon Oh

A 1ynm 1.25V 8Gb, 16Gb/s/pin GDDR6-based Accelerator-in-Memory supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep-Learning Applications

Seongju Lee, Kyuyoung Kim, Sanghoon Oh et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 126 citations

Engineering, Computer Engineering, Computer Science +13

A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho et al. · IEEE Journal of Solid-State Circuits · 2022 · 71 citations

Engineering, Computer Engineering, Computer Science +15

A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application

Daehan Kwon, Seongju Lee, Kyuyoung Kim et al. · IEEE Journal of Solid-State Circuits · 2022 · 39 citations

Engineering, Computer Engineering, Computer Science +17

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density

Wanik Cho, Jongseok Jung, Jongwoo Kim et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization

Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee et al. · 2024 · 30 citations

Engineering, Computer Engineering, Computer Science +17