Chang Kwon Lee

A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho et al. · IEEE Journal of Solid-State Circuits · 2022 · 62 citations

Hbm3 Dram, Electrical Engineering, Non-volatile Memory +13

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 36 citations

Engineering, Computer Architecture, Multi-channel Memory Architecture +16

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

Dong Uk Lee, Ho Sung Cho, Jihwan Kim et al. · 2020 · 31 citations

Electrical Engineering, Hbm2e Dram, Engineering +15

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization

Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee et al. · 2024 · 25 citations