V.N. Ulimov

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky et al. · IEEE Transactions on Nuclear Science · 1997 · 50 citations

Device Modeling, Experimental Results, Electrical Engineering +14

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Gennady I. Zebrev, D.Y. Pavlov, A.Y. Nikiforov et al. · IEEE Transactions on Nuclear Science · 2006 · 31 citations

Device Modeling, Electrical Engineering, Bipolar Transistors +14

The conversion model of low dose rate effect in bipolar transistors

D. V. Savchenkov, Alexander S. Bakerenkov, V.N. Ulimov et al. · 2009 · 29 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

Simulation of Bipolar Transistor Degradation at Various Dose Rates and Electrical Modes for High Dose Conditions

Gennady I. Zebrev, A.S. Petrov, Rustem G. Useinov et al. · IEEE Transactions on Nuclear Science · 2014 · 23 citations

Engineering, Radiation Effect, Electrical Modes +16

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

D. V. Savchenkov, Alexander S. Bakerenkov, V.N. Ulimov · Russian Microelectronics · 2010 · 22 citations