Toshimi Hitora

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm² grown by MIST EPITAXY^®

Masaya Oda, Rie Tokuda, Hitoshi Kambara et al. · Applied Physics Express · 2016 · 209 citations

Engineering, Electrical Engineering, Materials Science +14

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Shizυo Fujita, Masaya Oda, Kentaro Kaneko et al. · Japanese Journal of Applied Physics · 2016 · 144 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Yuichi Oshima, Katsuaki Kawara, Takashi Shinohe et al. · APL Materials · 2018 · 112 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

A power device material of corundum-structured α-Ga ₂ O ₃ fabricated by MIST EPITAXY ^® technique

Kentaro Kaneko, Shizυo Fujita, Toshimi Hitora · Japanese Journal of Applied Physics · 2018 · 100 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of γ-(Al<i>_x</i>Ga₁₋<i>_x</i>)O₃alloy films for band-gap engineering

Takayoshi Oshima, Yuji Katō, Masaya Oda et al. · Applied Physics Express · 2017 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17