Concepedia

Hangbing Lv

HL

Statistics

Publications

5

Citations

312

H-Index

5

Active since

2006

Affiliations

Chinese Academy of Sciences(Current)

Institute of Microelectronics

Shanghai Fudan Microelectronics (China)

Fudan University

The Synergetic Innovation Center for Advanced Materials

Hangbing Lv is an author at Chinese Academy of Sciences specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMaterial ScienceGraphene3D MemoryThin FilmsHeat TransferNanoelectronicsMicroelectronics

Publications per year

2006–2018

5

Publications

5

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Xiaolong Zhao, Jun Ma, Xiangheng Xiao et al. · Advanced Materials · 2018 · 247 citations · Full text

Engineering, Emerging Memory Technology, Graphene Defect Engineering +16

Polarity-Free Resistive Switching Characteristics of Cu <sub>x</sub> O Films for Non-volatile Memory Applications

Hangbing Lv, Peng Zhou, Fu Xiu-Feng et al. · Chinese Physics Letters · 2008 · 22 citations · Full text

Materials Science, Room Temperature, Electrical Engineering +10

Electronic properties of GST for non-volatile memory

Hangbing Lv, Peng Zhou, Yinyin Lin et al. · Microelectronics Journal · 2006 · 22 citations

Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Shibing Long, Xiaojuan Lian, C. Cagli et al. · 2013 · 11 citations

Thermal effect on endurance performance of 3-dimensional RRAM crossbar array

Nianduan Lu, Pengxiao Sun, Ling Li et al. · Chinese Physics B · 2016 · 10 citations

Non-volatile Memory, Electrical Engineering, 3D Ic Architecture +15

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