N. Hashikawa

Detection of arsenic dopant atoms in a silicon crystal using a spherical aberration corrected scanning transmission electron microscope

Yoshifumi Oshima, Yusuke Hashimoto, Y. Tanishiro et al. · Physical Review B · 2010 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Spike Annealing as Second Rapid Thermal Annealing to Prevent Pure Nickel Silicide From Decomposing on a Gate

Takuya Futase, N. Hashikawa, Takeshi Kamino et al. · IEEE Transactions on Semiconductor Manufacturing · 2009 · 18 citations

Engineering, Materials Engineering, Materials Science +14

A Dopant Cluster in a Highly Antimony Doped Silicon Crystal

Suhyun Kim, Yoshifumi Oshima, Hidetaka Sawada et al. · Applied Physics Express · 2010 · 14 citations

Engineering, Materials Engineering, Materials Science +14

${\rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance

Takuya Futase, N. Hashikawa, H. Yamamoto et al. · IEEE Transactions on Semiconductor Manufacturing · 2010 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +12