Y. Ohsawa

1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

Takahiro Nakamura, Takafumi Okuda, Ryuji Kobayashi et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2005 · 39 citations

Photonics, Engineering, Laser Science +11

ETB-QW InAs MOSFET with scaled body for improved electrostatics

T.-W. Kim, Dong-Jo Kim, Donghyi Koh et al. · 2012 · 28 citations

Semiconductors, Etb Channel, Electrical Engineering +14

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> (EOT < 1 nm) for low-power logic applications

T.-W. Kim, Dong-Jo Kim, Donghyi Koh et al. · 2013 · 20 citations

Semiconductor Technology, Electrical Engineering, Tri-gate Mosfets +11

Four-channel 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1.3-/spl mu/m CWDM systems

K. Tsuruoka, Ryuji Kobayashi, Y. Ohsawa et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2005 · 18 citations

Free-space Optical Network, Photonics, Four-channel 10-Gb/s Operation +14

Low-Operation-Current and Highly-Reliable 1.3-µm AlGaInAs Strain Compensated MQW-BH-DFB Lasers for 100°C, 10-Gb/s Operation

Tetsuro Okuda, Y. Muroya, Shin Ishikawa et al. · 2004 · 12 citations

Photonics, Mqw-bh-dfb Lasers, Algainas Strain-compensated-mqw-bh-dfb Lasers +11