ETB-QW InAs MOSFET with scaled body for improved electrostatics

Abstract

This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 50 nm (S =103 mV/dec, DIBL = 73 mV/V). These excellent metrics are achieved by using extremely thin body (1/3/1 nm InGaAs/InAs/InGaAs) quantum well structure with optimized layer design and a high mobility InAs channel. The ETB channel does not significantly degrade transport properties as evidenced by g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> >1.5 mS/μm and v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in</sub> j = 2.4 × 10 cm/s.