Concepedia

R. W. Bicknell

RW

13

Publications

408

Citations

12

H-Index

1962

Active since

Affiliations

John Innes Centre(Current)

Oclaro (United Kingdom)

R. W. Bicknell is an author at John Innes Centre specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceThin FilmsSurface ScienceCrystalline DefectsMaterials EngineeringSemiconductorsPhysicsMicroelectronics

Publications per year

1962–1977

13

Publications

13

Ion-implantation doping of semiconductors

L. N. Large, R. W. Bicknell · Journal of Materials Science · 1967 · 77 citations

Semiconductors, Ion Implantation, Engineering +4

The epitaxy of silicon on alumina—structural effects

R. W. Bicknell, B.A. Joyce, J.H. Neave et al. · Philosophical magazine · 1966 · 48 citations

Materials Science, Semiconductors, Engineering +12

Correlation of electron microscope studies with the electrical properties of boron implanted silicon

R. W. Bicknell, Robert M. Allen · Radiation Effects · 1970 · 45 citations

Engineering, Microscopy, Integrated Circuits +17

Growth mechanism and defect structures in epitaxial silicon

J. M. Charig, B.A. Joyce, D. J. Stirland et al. · Philosophical magazine · 1962 · 40 citations

Materials Science, Growth Rate Conditions, Epitaxial Growth +12

The distribution of condensed defect structures formed in annealed boron-implanted silicon

R. W. Bicknell · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1969 · 35 citations

Rows per page

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