R. W. Bicknell - Concepedia

Author

R. W. Bicknell

John Innes Centre

Also Known As

R W Bicknell, R. Bicknell, R. W. Bicknell, R.W. Bicknell

Publications

469

Citations

H-Index

Concepts

All Affiliations

John Innes Centre Oclaro (United Kingdom)

About

R. W. Bicknell is an author at John Innes Centre specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	351
2	Applied Physics	10	11	351
3	Materials Engineering	5	5	112
4	Electrical Engineering	3	3	79
5	Chemistry	1	1	48

R. W. Bicknell

Publications

408

Citations

H-Index

Page 1

	Year	Citations
Ion-implantation doping of semiconductors L. N. Large, R. W. Bicknell Journal of Materials Science SemiconductorsIon ImplantationEngineeringApplied PhysicsSemiconductor Material	1967	77
The epitaxy of silicon on alumina—structural effects R. W. Bicknell, B.A. Joyce, J.H. Neave, Philosophical magazine Materials ScienceSemiconductorsEngineeringCrystalline DefectsAbstract Epitaxial Films	1966	48
Correlation of electron microscope studies with the electrical properties of boron implanted silicon R. W. Bicknell, Robert M. Allen Radiation Effects EngineeringMicroscopyIntegrated CircuitsSilicon On InsulatorElectrical Properties	1970	45
Growth mechanism and defect structures in epitaxial silicon J. M. Charig, B.A. Joyce, D. J. Stirland, Philosophical magazine Materials ScienceGrowth Rate ConditionsEpitaxial GrowthEngineeringSurface Science	1962	40
The distribution of condensed defect structures formed in annealed boron-implanted silicon R. W. Bicknell Proceedings of the Royal Society of London A Mathematical and Physical Sciences	1969	35
The epitaxial deposition of silicon on quartz R. W. Bicknell, J. M. Charig, B.A. Joyce, Philosophical magazine Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics	1964	29
The annealing characteristics of phosphorous implanted silicon. I R. W. Bicknell Philosophical magazine Materials EngineeringSemiconductorsMaterials ScienceCrystalline SiliconEngineering	1972	27
The structure of vacuum condensed Ni-Cr films R. W. Bicknell, H. Blackburn, David Campbell, Microelectronics Reliability Materials EngineeringMaterials ScienceEngineeringSurface ScienceCondensed Matter Physics	1964	26
Electrical and structure sensitive measurements on ion implanted GaAs R. W. Bicknell, P.L.F. Hemment, E.C. Bell, physica status solidi (a) Ion ImplantationElectrical EngineeringStructure Sensitive MeasurementsSemiconductor Device	1972	22
Phase analysis of amorphous resistive films R. W. Bicknell British Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringPhysicsMetallic Functional Material	1966	20

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