Correlation of electron microscope studies with the electrical properties of boron implanted silicon

Abstract

Abstract A number of 1ω cm n-type silicon substrates have been implanted with boron at room temperature. Samples from these substrates were annealed at predetermined temperatures between 600°K and 1400°K and four-probe electrical measurements and transmission electron micrographs were taken. An attempt has been made to correlate the two studies and it is possible to explain the observed annealing behaviour in terms of precipitation during recrystallization, and migration of defects.