D. Oertel

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

D. Bimberg, D. E. Mars, J. N. Miller et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 124 citations

Engineering, Line Shape Theory, Semiconductor Nanostructures +17

High-precision band-gap determination of Al0.48In0.52As with optical and structural methods

D. Oertel, D. Bimberg, R. K. Bauer et al. · Applied Physics Letters · 1989 · 55 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +18

Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

D. Bimberg, D. E. Mars, J. N. Miller et al. · Superlattices and Microstructures · 1987 · 35 citations

Aluminium Nitride, Engineering, Physics +6

Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

K. W. Carey, Shih-Yuan Wang, R. Hull et al. · Journal of Crystal Growth · 1986 · 16 citations

Photonics, Electrical Engineering, Engineering +8

Detailed atomic scale structure of AlInAs/GaInAs quantum wells

D. Bimberg, D. Oertel, R. Hull et al. · Journal of Applied Physics · 1989 · 13 citations

Engineering, Alinas/gainas Quantum Wells, Microscopy +20