K. Tittelbach‐Helmrich

Author

Leibniz Institute for High Performance Microelectronics

Also Known As

K Tittelbach-Helmrich, K. Tittelbach-Helmrich, K. Tittelbach-helmrich, K. Tittelbach‐Helmrich, Klaus Tittelbach-Helmrich, Klaus Tittelbach‐Helmrich

Publications

409

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for High Performance Microelectronics Institut für Solartechnologien (Germany)

About

K. Tittelbach‐Helmrich is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	12	276
2	Applied Physics	6	6	138
3	Computer Engineering	5	5	128
4	Chemistry	1	1	32
5	Computer Science	1	1	11

K. Tittelbach‐Helmrich

Publications

276

Citations

H-Index

Page 1

	Year	Citations
On the single-chip implementation of a Hiperlan/2 and IEEE 802.11a capable modem Eckhard Grass, K. Tittelbach‐Helmrich, U. Jagdhold, IEEE Personal Communications Wireless CommunicationsTime-sensitive NetworkingEngineeringWireless LanSingle Chip	2001	50
Electrical properties of lightly doped p-type silicon–germanium single crystals P. Gaworzewski, K. Tittelbach‐Helmrich, U. Penner, Journal of Applied Physics SemiconductorsExperimental ResultsElectrical EngineeringSemiconductor TechnologyEngineering	1998	40
DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C K. Schmalz, F.‐G. Kirscht, H. Klose, physica status solidi (a) EngineeringChemistryDefect ToleranceDeep Level DefectsSemiconductor Device	1987	32
An integration method for the analysis of multiexponential transient signals K. Tittelbach‐Helmrich Measurement Science and Technology Numerical AnalysisStatistical Signal ProcessingEngineeringTransient ElectronicsNew Algorithm	1993	29
A system-on-chip implementation of the IEEE 802.11a MAC layer Goran Panić, Daniel Dietterle, Zoran Stamenković, Hardware SecurityTime-sensitive NetworkingEngineeringSingle ChipWireless Lan	2003	28
Properties of the TiSi2/<i>p</i>+<i>n</i> structures formed by ion implantation through silicide and rapid thermal annealing H.B. Erzgräber, P. Zaumseil, E. Bugiel, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductor Nanostructures	1992	19
DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C K. Schmalz, F.‐G. Kirscht, K. Tittelbach‐Helmrich physica status solidi (a) Materials ScienceHigh DensityElectrical EngineeringSemiconductor TechnologyEngineering	1988	19
Comparison of EBIC and DLTS Measurements on Boron-Doped CZ Silicon Contaminated with Iron M. Kittler, W. Seifert, K. Schmalz, physica status solidi (a) Electrical EngineeringEngineeringIntrinsic ImpurityApplied PhysicsDlts Measurements	1986	18
Sensor node processor for security applications Goran Panić, Thomas Basmer, Oliver Schrape, EngineeringWireless Sensor SystemComputer ArchitectureChip ArchitectureSensor Connectivity	2011	11
Simulation of capacitance-voltage profiles for the analysis of measurements at a p-type Si-SiGe-Si single quantum well K. Tittelbach‐Helmrich Semiconductor Science and Technology Device ModelingElectrical EngineeringEngineeringValence Band OffsetPhysics	1993	10

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