Curtis M. Grens - Concepedia

Author

Curtis M. Grens

Georgia Institute of Technology

Also Known As

C. Grens, C.M. Grens, Curtis Grens, Curtis M. Grens

Publications

420

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology IBM (United States)Georgia Tech Research Institute

About

Curtis M. Grens is an author at Georgia Institute of Technology specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	346
2	Electrical Engineering	11	13	281
3	Computer Engineering	7	7	142
4	Applied Physics	4	4	74
5	Materials Engineering	1	1	10

Curtis M. Grens

Publications

346

Citations

H-Index

Page 1

	Year	Citations
A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules Jonathan P. Comeau, Matthew A. Morton, Wei-Min Lance Kuo, IEEE Journal of Solid-State Circuits RadarBicmos TechnologySilicon-germanium ReceiverEngineeringRadio Frequency	2008	65
Reliability of SiGe HBTs for Power Amplifiers—Part I: Large-Signal RF Performance and Operating Limits Curtis M. Grens, Peng Cheng, John D. Cressler IEEE Transactions on Device and Materials Reliability Electrical EngineeringOperating LimitsEngineeringRf SemiconductorHigh-frequency Device	2009	45
Reliability of SiGe HBTs for Power Amplifiers&#x2014;Part II: Underlying Physics and Damage Modeling Peng Cheng, Curtis M. Grens, John D. Cressler IEEE Transactions on Device and Materials Reliability Power AmplifiersElectrical EngineeringReliability EngineeringEngineeringRf Semiconductor	2009	32
An 850 mW X-Band SiGe power amplifier Joel M. Andrews, John D. Cressler, Wei-Min Lance Kuo, Electrical EngineeringEngineeringVoltage SwingRf SemiconductorHigh-frequency Device	2008	28
Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers Joel M. Andrews, Curtis M. Grens, John D. Cressler IEEE Transactions on Electron Devices EngineeringIntegrated CircuitsRf SemiconductorModeling And SimulationThermal Modeling	2009	28
The MATRICs RF-FPGA in 180nm SiGe-on-SOI BiCMOS Lawrence J. Kushner, Kevin W. Sliech, Gregory M. Flewelling, EngineeringVlsi DesignComputer ArchitectureIntegrated CircuitsElectromagnetic Compatibility	2015	24
The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits Curtis M. Grens, John D. Cressler, Joel M. Andrews, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2007	23
On Common–Base Avalanche Instabilities in SiGe HBTs Curtis M. Grens, John D. Cressler, Alvin Joseph IEEE Transactions on Electron Devices Electrical EngineeringPhysical Design (Electronics)Emitter ResistancesCommon–base Avalanche InstabilitiesPhysics	2008	21
Reliability issues associated with operating voltage constraints in advanced SiGe HBTs Curtis M. Grens, John D. Cressler, Joel M. Andrews, Reliability IssuesElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2005	18
Assessing reliability issues in cryogenically-operated SiGe HBTs Chendong Zhu, Curtis M. Grens, Enhai Zhao, Reliability IssuesOperating Point InstabilitiesElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)	2005	16

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