Joel M. Andrews - Concepedia

Author

Joel M. Andrews

Georgia Institute of Technology

Also Known As

Andrews, Joel, J. Andrews, J.M. Andrews, Joel Andrews, Joel M. Andrews

Publications

445

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Georgia Tech Research Institute IBM (United States)

About

Joel M. Andrews is an author at Georgia Institute of Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	340
2	Electrical Engineering	11	11	265
3	Computer Engineering	7	7	165
4	Applied Physics	3	3	88
5	Nuclear Engineering	1	1	38

Joel M. Andrews

Publications

340

Citations

H-Index

Page 1

	Year	Citations
A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules Jonathan P. Comeau, Matthew A. Morton, Wei-Min Lance Kuo, IEEE Journal of Solid-State Circuits RadarBicmos TechnologySilicon-germanium ReceiverEngineeringRadio Frequency	2008	65
The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs A. P. Gnana Prakash, Akil K. Sutton, Ryan M. Diestelhorst, IEEE Transactions on Nuclear Science Room TemperatureElectrical EngineeringEngineeringHigh-energy Nuclear ReactionPhysics	2006	38
A High-Gain, Two-Stage, X-Band SiGe Power Amplifier Joel M. Andrews, John D. Cressler, Mark A. Mitchell IEEE MTT-S International Microwave Symposium digest Rf SubsystemElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2007	32
A 6.75 ns 16*16 bit multiplier in single-level-metal CMOS technology R. K. Sharma, A. Lopez, J.A. Michejda, IEEE Journal of Solid-State Circuits Low-power ElectronicsNs 16Electrical EngineeringEngineeringVlsi Design	1989	29
An 850 mW X-Band SiGe power amplifier Joel M. Andrews, John D. Cressler, Wei-Min Lance Kuo, Electrical EngineeringEngineeringVoltage SwingRf SemiconductorHigh-frequency Device	2008	28
Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers Joel M. Andrews, Curtis M. Grens, John D. Cressler IEEE Transactions on Electron Devices EngineeringIntegrated CircuitsRf SemiconductorModeling And SimulationThermal Modeling	2009	28
Comparison of Shunt and Series/Shunt nMOS Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules Wei-Min Lance Kuo, Jonathan P. Comeau, Joel M. Andrews, Reflective Shunt SwitchElectrical EngineeringEngineeringRf SemiconductorMixed-signal Integrated Circuit	2007	23
The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits Curtis M. Grens, John D. Cressler, Joel M. Andrews, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2007	23
Evidence of minority carrier injection efficiency &gt;90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Venkata S. N. Chava, Sabih U. Omar, Gabriel Brown, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesUltraviolet DetectionSemiconductor Device	2016	21
Reliability issues associated with operating voltage constraints in advanced SiGe HBTs Curtis M. Grens, John D. Cressler, Joel M. Andrews, Reliability IssuesElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2005	18

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