M. Ahoujja

Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

Joan M. Redwing, M. A. Tischler, J.S. Flynn et al. · Applied Physics Letters · 1996 · 133 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures

Ikai Lo, W. C. Mitchel, M. Ahoujja et al. · Applied Physics Letters · 1995 · 26 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +12

Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation

Michael R. Hogsed, Y. K. Yeo, M. Ahoujja et al. · Applied Physics Letters · 2005 · 21 citations

Wide-bandgap Semiconductor, Engineering, Nuclear Physics +17

High carrier lifetime InSb grown on GaAs substrates

E. Michel, Hooman Mohseni, J. D. Kim et al. · Applied Physics Letters · 1997 · 18 citations

Materials Science, Semiconductors, Electrical Engineering +11

Degenerate parallel conducting layer and conductivity type conversion observed from <i>p</i>-Ge1−ySny (y = 0.06%) grown on <i>n</i>-Si substrate

Mee‐Yi Ryu, Y. K. Yeo, M. Ahoujja et al. · Applied Physics Letters · 2012 · 12 citations

Semiconductor Technology, Electrical Engineering, Engineering +9