F. Korndörfer

Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

Stefan Lischke, Anna Pęczek, Jesse Morgan et al. · Nature Photonics · 2021 · 288 citations · Full text

Germanium-on-silicon Devices, Engineering, Optoelectronic Devices +17

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Vlsi Design, Radio Frequency +16

A 0.13µm SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Oscillator Gate Delays, Engineering, Vlsi Design +16

BEOL embedded RF-MEMS switch for mm-wave applications

Mehmet Kaynak, K.‐E. Ehwald, J. Drews et al. · 2009 · 47 citations

Electrical Engineering, Engineering, Radio Frequency +15

60 GHz transceiver circuits in SiGe:C BiCMOS technology

Wolfgang Winkler, J. Borngräber, H. Gustat et al. · 2004 · 38 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +12