J. Borngräber

Statistics

Publications

Citations

793

H-Index

Active since

2003

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Institut für Solartechnologien (Germany)

Silicon Radar (Germany)

Technische Universität Berlin

Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)

J. Borngräber is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, electrical engineering, and microelectronics.

Publications per year

2003–2019

Publications

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

A 0.13&#x00B5;m SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

Terahertz gas-phase spectroscopy: chemometrics for security and medical applications

Philipp Neumaier, K. Schmalz, J. Borngräber et al. · The Analyst · 2014 · 51 citations

Natural Sciences, Chemistry, Toxicology +17

A fully integrated BiCMOS PLL for 60 GHz wireless applications

Wolfgang Winkler, J. Borngräber, B. Heinemann et al. · 2005 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16

A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology

Yanming Sun, J. Borngräber, Frank Herzel et al. · 2005 · 46 citations

Engineering, Electrical Engineering, Microelectronics +16

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