Chiharu Ota

Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Tetsuo Hatakeyama, Johji Nishio, Chiharu Ota et al. · 2005 · 55 citations

Electrical Engineering, Anisotropic Physical Properties, Engineering +11

Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama et al. · IEEE Transactions on Electron Devices · 2008 · 37 citations

Device Simulator, Semiconductor Technology, Electrical Engineering +13

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

Aoi Okada, Johji Nishio, Ryosuke Iijima et al. · Japanese Journal of Applied Physics · 2018 · 33 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10

Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes

Johji Nishio, Aoi Okada, Chiharu Ota et al. · Journal of Applied Physics · 2020 · 20 citations

4H-sic Pin Diodes, Different Origins, Electrical Engineering +14

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

Chiharu Ota, Johji Nishio, Aoi Okada et al. · Journal of Electronic Materials · 2021 · 19 citations

4H-sic Pin Diodes, Generation Process, Surface Side