Physical Modeling and Scaling Properties of 4H-SiC Power Devices

Tetsuo Hatakeyama, Johji Nishio, Chiharu Ota, +1

Electrical EngineeringAnisotropic Physical PropertiesEngineeringIon ImplantationPower Device +9

Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama, +4

IEEE Transactions on Electron Devices

Device SimulatorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +11

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

Aoi Okada, Johji Nishio, Ryosuke Iijima, +9

Japanese Journal of Applied Physics

Semiconductor TechnologyElectrical EngineeringSemiconductor Device4H-sic P–i–n DiodesEngineering +8

Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes

Johji Nishio, Aoi Okada, Chiharu Ota, +1

Journal of Applied Physics

4H-sic Pin DiodesDifferent OriginsElectrical EngineeringStructural DifferencesPartial Dislocations +12

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

Chiharu Ota, Johji Nishio, Aoi Okada, +1

Journal of Electronic Materials

4H-sic Pin DiodesGeneration ProcessSurface Side

Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation

Johji Nishio, Aoi Okada, Chiharu Ota, +1

Journal of Electronic Materials

Electrical EngineeringForward Voltage Degradation4H-sic Pin DiodePower Semiconductor Device

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

Chiharu Ota, Johji Nishio, Tetsuo Hatakeyama, +4

Materials science forum

SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +10

V<sub>F</sub> Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

Chiharu Ota, Johji Nishio, Kazuto Takao, +1

Materials science forum

Basal Plane DislocationElectrical EngineeringEngineeringNanoelectronicsApplied Physics +7

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

Johji Nishio, Aoi Okada, Chiharu Ota, +1

Japanese Journal of Applied Physics

Materials ScienceFault GeometryEpitaxial GrowthEngineeringFault Expansion +13

Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

Johji Nishio, Chiharu Ota, Ryosuke Iijima

Japanese Journal of Applied Physics

Materials ScienceBasal Plane DislocationEngineeringDislocation InteractionPhysics +12