J. Dekoster

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi et al. · Microelectronic Engineering · 2010 · 105 citations

Materials Science, Electrical Engineering, Engineering +7

Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

Mohanchand Paladugu, Clément Merckling, Roger Loo et al. · Crystal Growth & Design · 2012 · 103 citations

Engineering, Device Integration, Antiphase Boundaries +21

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Kai Cheng, Hu Liang, M. Van Hove et al. · Applied Physics Express · 2011 · 99 citations · Full text

Wide-bandgap Semiconductor, Mm Silicon, Electron Density +10

Spin Density Wave Instability for Chromium in Fe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>/</mml:mo></mml:math>Cr(100) Multilayers

Johan Meersschaut, J. Dekoster, R. Schad et al. · Physical Review Letters · 1995 · 82 citations

Magnetic Properties, Engineering, Low-dimensional Magnetism +27

Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

Yen‐Chung Chang, Clément Merckling, J. Penaud et al. · Applied Physics Letters · 2010 · 72 citations · Full text

Engineering, Important Gaas, Semiconductor Device +18