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Ryuji Tomita

RT

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Publications

2

Citations

29

H-Index

2

Active since

2013

Affiliations

Tokyo Institute of Technology(Current)

Ryuji Tomita is an author at Tokyo Institute of Technology specializing in materials science, device characterization, and semiconductor devices.

Publications per year

2013–2021

2

Publications

2

Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-<i>k</i> Passivation Layer

Ryuji Tomita, Shingo Ueda, Toshiyuki KAWADA et al. · IEEE Transactions on Electron Devices · 2021 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions

Ryuji Tomita, Hidehiko Kimura, M. Yasuda et al. · Microelectronics Reliability · 2013 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +8

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