E. Van Gieson

Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures

S. Nilsson, E. Van Gieson, D. J. Arent et al. · Applied Physics Letters · 1989 · 72 citations

Engineering, Materials Engineering, Materials Science +17

Problems related to the formation of lateral <i>p</i>–<i>n</i> junctions on channeled substrate (100) GaAs for lasers

H. P. Meier, R. F. Broom, Peter W. Epperlein et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 58 citations

Engineering, Materials Engineering, Materials Science +17

High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy

H. Jaeckel, Hektor Meier, G.L. Bona et al. · Applied Physics Letters · 1989 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers

H. P. Meier, E. Van Gieson, Peter W. Epperlein et al. · Journal of Crystal Growth · 1989 · 27 citations

Engineering, Materials Engineering, Materials Science +16

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

H. P. Meier, E. Van Gieson, W. Walter et al. · Applied Physics Letters · 1989 · 26 citations

Engineering, Materials Engineering, Materials Science +17