Yu-Hung Liao

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 320 citations · Full text

Oxide Heterostructures, Electrical Engineering, Engineering +5

Ferroelectric HfO₂ Memory Transistors With High-<i>κ</i> Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles

Ava J. Tan, Yu-Hung Liao, Li‐Chen Wang et al. · IEEE Electron Device Letters · 2021 · 192 citations

Memory Transistors, Engineering, Emerging Memory Technology +17

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO₂ Oxide

Daewoong Kwon, Suraj Cheema, Nirmaan Shanker et al. · IEEE Electron Device Letters · 2019 · 140 citations

Semiconductors, Negative Capacitance Fet, Electrical Engineering +10

Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors

Harshit Agarwal, Pragya Kushwaha, Yen-Kai Lin et al. · IEEE Electron Device Letters · 2019 · 96 citations

Device Modeling, Electrical Engineering, Engineering +8

Experimental Demonstration of a Ferroelectric HfO₂-Based Content Addressable Memory Cell

Ava J. Tan, Korok Chatterjee, Jiuren Zhou et al. · IEEE Electron Device Letters · 2019 · 61 citations

Non-volatile Memory, Engineering, Memory Design +18