Liang Pang

AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

Liang Pang, Yaguang Lian, Dong‐Seok Kim et al. · IEEE Transactions on Electron Devices · 2012 · 53 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12

FinFET SRAM with Enhanced Read / Write Margins

Andrew E. Carlson, Zheng Guo, S. Balasubramanian et al. · 2006 · 42 citations

Gate Workfunction, Non-volatile Memory, Electrical Engineering +14

Improvement of Ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme

Liang Pang, Kyekyoon Kim · Materials Science in Semiconductor Processing · 2013 · 23 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9

Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

Liang Pang, Hui-Chan Seo, Patrick L. Chapman et al. · Journal of Electronic Materials · 2010 · 20 citations

Electrical Engineering, Ion Implantation, Engineering +7

Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Liang Pang, Kyekyoon Kim · Journal of Physics D Applied Physics · 2012 · 19 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13