J.E. Fouquet

Room-temperature photoluminescence times in a GaAs/Al<i>x</i>Ga1−<i>x</i>As molecular beam epitaxy multiple quantum well structure

J.E. Fouquet, A. E. Siegman · Applied Physics Letters · 1985 · 135 citations

Semiconductors, Photonics, Excitation Densities +13

Recombination dynamics in GaAs/Al&amp;lt;inf&amp;gt;x&amp;lt;/inf&amp;gt;Ga&amp;lt;inf&amp;gt;1- x&amp;lt;/inf&amp;gt;As quantum well structures

J.E. Fouquet, R. D. Burnham · IEEE Journal of Quantum Electronics · 1986 · 78 citations

Semiconductors, Quantum Science, Photonics +14

Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P

J.E. Fouquet, V. M. Robbins, S. J. Rosner et al. · Applied Physics Letters · 1990 · 74 citations

Semiconductors, Photonics, Unusual Properties +14

Ab initio study of proton-transfer surfaces in zeolite models

E. Kassab, J.E. Fouquet, M. Allavena et al. · The Journal of Physical Chemistry · 1993 · 57 citations

Engineering, Chemical Analysis, Physics +15

Compact optical cross-connect switch based on total internal reflection in a fluid-containing planar lightwave circuit

J.E. Fouquet · 2002 · 57 citations

Optical Materials, Engineering, Optical Transmission System +18