D.I. Sanderson

SiGe HBT technology with f/sub max//f/sub T/ = 350/300 GHz and gate delay below 3.3 ps

Marwan Khater, Jae-Sung Rieh, Thomas Adam et al. · 2005 · 74 citations

Engineering, Electrical Engineering, Microelectronics +16

Quality factor and inductance in differential IC implementations

Ryan Bunch, D.I. Sanderson, Sanjay Raman · IEEE Microwave Magazine · 2002 · 52 citations

Engineering, Electrical Engineering, Circuit Theory +16

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

Jae-Sung Rieh, D. Greenberg, Marwan Khater et al. · 2004 · 50 citations

Engineering, Electrical Engineering, Materials Science +16

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

Jae-Sung Rieh, D. Greenberg, Marwan Khater et al. · Radio Frequency Integrated Circuits Symposium · 2004 · 27 citations

Engineering, Electrical Engineering, Materials Science +14

A 5-6-GHz polyphase filter with tunable I/Q phase balance

D.I. Sanderson, R. Svitek, Sanjay Raman · IEEE Microwave and Wireless Components Letters · 2004 · 24 citations

Engineering, Electrical Engineering, Analog Electronics +16