Xiaowen Xi

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Xinhai Yu, Changchun Chai, Yang Liu et al. · Chinese Physics B · 2015 · 23 citations

Wide-bandgap Semiconductor, Engineering, High Power Microwave +18

The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse

Changchun Chai, Xiaowen Xi, Xingrong Ren et al. · Acta Physica Sinica · 2010 · 23 citations · Full text

Electrical Engineering, Damage Mechanism, Engineering +9

Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse

Yang Liu, Changchun Chai, Qingyang Fan et al. · Microelectronics Reliability · 2016 · 16 citations

Electrical Engineering, Gaas Phemt, Engineering +8

Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse

Yang Liu, Changchun Chai, Yu Xin-Hai et al. · Acta Physica Sinica · 2016 · 16 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave

Xinhai Yu, Changchun Chai, Xingrong Ren et al. · Journal of Semiconductors · 2014 · 12 citations

Low-power Electronics, Electrical Engineering, Engineering +10