Hongtu Qian

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Sheng Jiang, Kean Boon Lee, Ivor Guiney et al. · IEEE Transactions on Power Electronics · 2017 · 24 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Zaffar H. Zaidi, Lee Kb, Ivor Guiney et al. · Semiconductor Science and Technology · 2015 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

Haochen Zhang, Hu Wang, Mingshuo Zhang et al. · IEEE Electron Device Letters · 2024 · 19 citations

Engineering, Electrical Engineering, Materials Science +13

Dislocation-assisted electron and hole transport in GaN epitaxial layers

Yixu Yao, Sen Huang, Ruyue Cao et al. · Nature Communications · 2025 · 15 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Kean B. Lee, Ivor Guiney, Sheng Jiang et al. · Applied Physics Express · 2015 · 12 citations

Engineering, Electrical Engineering, Materials Science +17