Yizheng Liu

Ultra-low reverse leakage in large area kilo-volt class <i>β</i> -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF

Saurav Roy, Benjamin Kostroun, Jacqueline Cooke et al. · Applied Physics Letters · 2023 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Over 6 <i>μ</i>m thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) <i>β</i>-Ga2O3 drift layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit et al. · Applied Physics Letters · 2024 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Flow-Induced Crystallization of Poly(ether ether ketone): Universal Aspects of Specific Work Revealed by Corroborative Rheology and X-ray Scattering Studies

Jiho Seo, Daniele Parisi, Anne M. Gohn et al. · Macromolecules · 2020 · 34 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) <b> <i>β</i> </b>-Ga2O3 epitaxial drift layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit et al. · Applied Physics Letters · 2024 · 29 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Low <i>Q_CV_F </i> 20 A/1.4 kV <i>β</i>-Ga₂O₃ Vertical Trench High-k RESURF Schottky Barrier Diode With Turn-On Voltage of 0.5 V

Saurav Roy, Benjamin Kostroun, Yizheng Liu et al. · IEEE Electron Device Letters · 2024 · 22 citations

Engineering, Electrical Engineering, Materials Science +17