Jiro Yota

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Jiro Yota, Hong Shen, Ravi Ramanathan · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 99 citations

Engineering, High Density Capacitor, Chemical Deposition +16

A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films

Jiro Yota, J. Hander, Adli A. Saleh · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 97 citations

Materials Science, Engineering, Hdp Cvd Film +15

An infrared study of thin-film formation on Si and Ge surfaces treated with aqueous NH4F and HF

Jiro Yota, V. A. Burrows · Journal of Applied Physics · 1991 · 28 citations

Engineering, Native Oxide, Thin-film Formation +18

Chemical and electrochemical treatments of GaAs with Na2S and (NH4)2S solutions: A surface chemical study

Jiro Yota, V. A. Burrows · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 27 citations

Engineering, Chemistry, Semiconductors +16

Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology

Jiro Yota · ECS Transactions · 2011 · 23 citations

Engineering, Pecvd Film, Silicon Nitride Film +20