Hans‐Joachim Schulze

Detailed characterization of electron sources yielding first demonstration of European X-ray Free-Electron Laser beam quality

F. Stephan, C. Boulware, M. Krasilnikov et al. · Physical Review Special Topics - Accelerators and Beams · 2010 · 97 citations · Full text

Engineering, Photoinjector Test Facility, Rf Gun +16

Limiting Factors of the Safe Operating Area for Power Devices

Hans‐Joachim Schulze, F.‐J. Niedernostheide, F. Pfirsch et al. · IEEE Transactions on Electron Devices · 2012 · 72 citations

Engineering, Power Optimization (Eda), Backside Filament Transforms +21

600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

H. Ruthing, F. Hille, F.‐J. Niedernostheide et al. · 2007 · 60 citations

Engineering, Power Electronic Systems, Reverse Recovery Behavior +18

A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

Min Chen, Josef Lutz, Martin Domeij et al. · 2006 · 57 citations

Diode Structure, Semiconductor Technology, Electrical Engineering +11

The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes

Josef Lutz, Roman Baburske, Min Chen et al. · IEEE Transactions on Electron Devices · 2009 · 53 citations

Engineering, Power Diodes, Power Electronics +18