600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

Abstract

Reverse conducting IGBTs are fabricated in a large productive volume for soft switching applications, such as inductive heaters, microwave ovens or lamp ballast, since several years. To satisfy the requirements of hard switching applications, such as inverters in refrigerators, air conditioners or general purpose drives, the reverse recovery behavior of the integrated diode has to be optimized. Two promising concepts for such an optimization are based on a reduction of the charge- carrier lifetime or the anti-latch p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> implantation dose. It is shown that a combination of both concepts will lead to a device with a good reverse recovery behavior, low forward and reverse voltage drop and excellent over current turn- off capability of a trench field-stop IGBT.