A. Privat

Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers

F. Roig, L. Dusseau, Ani Khachatrian et al. · IEEE Transactions on Nuclear Science · 2013 · 28 citations

Device Modeling, Electrical Engineering, Total Ionizing Dose +9

Physically Based Predictive Model for Single Event Transients in CMOS Gates

Mehdi Saremi, A. Privat, Hugh Barnaby et al. · IEEE Transactions on Electron Devices · 2016 · 27 citations

Engineering, Vlsi Design, Computer Architecture +20

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

K. Muthuseenu, Hugh Barnaby, K.F. Galloway et al. · IEEE Transactions on Nuclear Science · 2021 · 26 citations

Device Modeling, Segr Tolerances, Electrical Engineering +12

Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose

Madeline G. Esposito, Jack Manuel, A. Privat et al. · IEEE Transactions on Nuclear Science · 2021 · 25 citations

Improved Model for Excess Base Current in Irradiated Lateral p-n-p Bipolar Junction Transistors

B. S. Tolleson, Philippe C. Adell, B.G. Rax et al. · IEEE Transactions on Nuclear Science · 2018 · 22 citations

Device Modeling, Electrical Engineering, Engineering +12